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APTM120H29FG
Full - Bridge MOSFET Power Module
VB US Q1 Q3
VDSS = 1200V RDSon = 290m typ @ Tj = 25C ID = 34A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
G1 OUT1 OUT2
G3
S1 Q2
S3 Q4
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
G2
G4
S2 0/VBUS
S4
* *
OUT1 G1 S1 VBUS 0/VBUS G2 S2
* Benefits * * * * *
S3 G3 OUT2
S4 G4
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM120H29FG- Rev 1
Max ratings 1200 34 25 136 30 348 780 22 50 3000
Unit V A V m W A mJ
July, 2006
APTM120H29FG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C
Typ
VGS = 10V, ID = 17A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
290 3
Max 350 1500 348 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 34A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 34A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5
Min
Typ 10.3 1.54 0.26 374 48 240 20 15 160 45 1980 1371 3131 1714
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 34A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 4 14
IS = - 34A VR = 600V diS/dt = 200A/s
Max 34 25 1.3 18 320 650
Unit A V V/ns ns C
July, 2006 2-6 APTM120H29FG- Rev 1
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 34A di/dt 700A/s VR VDSS Tj 150C
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APTM120H29FG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.16 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
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3-6
APTM120H29FG- Rev 1
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
July, 2006
APTM120H29FG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse 0.9
0 0.00001
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 100
VGS =15, 10 & 8V
Transfert Characteristics 160 140 ID, Drain Current (A)
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
80 60 40 20 0 0 5 10 15 20
7V 6.5V
120 100 80 60 40 20 0
TJ=25C T J=125C TJ=-55C
6V
5.5V 5V
25
30
0
1
2
3
4
5
6
7
8
9
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 17A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 30 20 10 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
20
40
60
80
25
50
75
100
125
150
July, 2006
ID, Drain Current (A)
TC, Case Temperature (C)
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4-6
APTM120H29FG- Rev 1
APTM120H29FG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 12 10 8 6 4 2 0 0 80 160 240 320 400 480 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=17A
1000
100s
100
limited by RDS on 1ms
10
Single pulse TJ =150C TC=25C 1
10ms
1 1200 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage I D=34A TJ=25C
V DS=240V VDS=600V V DS =960V
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5-6
APTM120H29FG- Rev 1
APTM120H29FG
Delay Times vs Current 180 td(on) and td(off) (ns) 150 60
V DS=800V RG =2.5 T J=125C L=100H
Rise and Fall times vs Current 80
V DS =800V RG =2.5 T J=125C L=100H
t d(off)
tf
90 60 30 0 10
tr and tf (ns)
120
40 tr 20
td(on)
0 20 30 40 50 60 70 10 20 I D, Drain Current (A) Switching Energy vs Current 30 40 50 ID, Drain Current (A) 60 70
Switching Energy vs Gate Resistance 7
VDS=800V ID=34A TJ=125C L=100H
6
Switching Energy (mJ)
5 4 3 2 1 0 10
Switching Energy (mJ)
VDS=800V RG=2.5 TJ=125C L=100H
Eon
6 5 4 3 2 1
Eoff
Eoff
Eon Eoff
20
30 40 50 60 I D, Drain Current (A)
70
0.0
2.5
5.0
7.5 10.0 12.5 15.0 17.5
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
Operating Frequency vs Drain Current 200 175
ZCS
IDR, Reverse Drain Current (A)
225
1000
Frequency (kHz)
150 125 100 75 50 25 0 8 12 16 20 24 28 ID, Drain Current (A) 32
VDS=800V D=50% RG=2.5 T J=125C T C=75C ZVS
100
T J=150C T J=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTM120H29FG- Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein

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